US 12,136,686 B2
Diode array
Hung-Cheng Lin, New Taipei (TW); Hung-Kuang Hsu, Taipei (TW); and Hua-Chen Hsu, Zhubei (TW)
Assigned to VISIONLABS CORPORATION, Taipei (TW)
Filed by Visionlabs Corporation, Taipei (TW)
Filed on Oct. 5, 2023, as Appl. No. 18/481,334.
Application 18/481,334 is a continuation of application No. 17/678,318, filed on Feb. 23, 2022, granted, now 11,881,540.
Application 17/678,318 is a continuation of application No. 16/917,346, filed on Jun. 30, 2020, granted, now 11,296,254, issued on Apr. 5, 2022.
Application 16/917,346 is a continuation of application No. PCT/CN2019/088648, filed on May 27, 2019.
Claims priority of provisional application 62/824,313, filed on Mar. 27, 2019.
Claims priority of provisional application 62/773,202, filed on Nov. 30, 2018.
Claims priority of provisional application 62/716,995, filed on Aug. 10, 2018.
Claims priority of application No. 109117578 (TW), filed on May 27, 2020.
Prior Publication US 2024/0047609 A1, Feb. 8, 2024
Int. Cl. H01L 33/14 (2010.01); H01L 25/075 (2006.01); H01L 25/16 (2023.01); H01L 33/00 (2010.01); H01L 33/38 (2010.01)
CPC H01L 33/145 (2013.01) [H01L 25/0753 (2013.01); H01L 25/167 (2013.01); H01L 33/0095 (2013.01); H01L 33/0093 (2020.05); H01L 33/382 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A diode array, comprising:
a substrate; and
a plurality of light emitting diodes disposed on the substrate and arranged in an array, wherein each of the light emitting diodes includes a stack of functional layers comprising a first type semiconductor layer, a second type semiconductor layer, and a light emitting layer located between the first type semiconductor layer and the second type semiconductor layer,
wherein at least one of the light emitting diodes includes:
a first current blocking region abutting a vertically extending boundary of the second type semiconductor layer;
wherein, with respect to a top-down view, the first current blocking region is formed about an outer edge of the light emitting diode and an outer perimeter of the first current blocking region is equal to or less than 400 micrometers;
wherein, with respect to a cross-sectional view, an arc corner about the outer edge of the light emitting diode;
wherein, the first current blocking region covering a sidewall region has a first thickness, and the first current blocking region covering the upper surface region has a second thickness, wherein the first thickness is less than or equal to the second thickness.