US 12,136,683 B2
Semiconductor device
Meng-Yang Chen, Hsinchu (TW); and Yuan-Ting Lin, Hsinchu (TW)
Assigned to EPISTAR CORPORATION, Hsinchu (TW)
Filed by EPISTAR CORPORATION, Hsinchu (TW)
Filed on Jun. 23, 2023, as Appl. No. 18/213,304.
Application 18/213,304 is a continuation of application No. 17/750,232, filed on May 20, 2022, granted, now 11,728,456.
Application 17/750,232 is a continuation of application No. 16/875,354, filed on May 15, 2020, granted, now 11,374,146, issued on Jun. 28, 2022.
Claims priority of provisional application 62/848,788, filed on May 16, 2019.
Claims priority of application No. 109114480 (TW), filed on Apr. 30, 2020.
Prior Publication US 2023/0335669 A1, Oct. 19, 2023
Int. Cl. H01L 33/00 (2010.01); H01L 33/04 (2010.01); H01L 33/10 (2010.01); H01L 33/30 (2010.01); H01L 33/62 (2010.01)
CPC H01L 33/002 (2013.01) [H01L 33/04 (2013.01); H01L 33/10 (2013.01); H01L 33/305 (2013.01); H01L 33/62 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
an active structure having two sides and comprising an active region;
a first semiconductor layer and a second semiconductor layer respectively located on the two sides of the active structure;
an intermediate layer located between the second semiconductor layer and the active structure;
a transition layer located on the second semiconductor layer; and
a contact layer located on the transition layer;
wherein the second semiconductor layer comprises a first dopant and the first semiconductor layer comprises a second dopant different from the first dopant, the contact layer includes a ternary III-V semiconductor material, and the second semiconductor layer includes a binary III-V semiconductor material, and the active region includes a quaternary semiconductor material.