US 12,136,679 B2
Semiconductor device comprising a photodetector with reduced dark current
Chen-Hao Chiang, Jhongli (TW); Shih-Wei Lin, Taipei (TW); Eugene I-Chun Chen, Taipei (TW); and Yi-Chen Chen, Jhubei (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu (TW)
Filed on May 3, 2023, as Appl. No. 18/311,292.
Application 18/311,292 is a division of application No. 16/910,566, filed on Jun. 24, 2020, granted, now 11,749,762.
Claims priority of provisional application 62/928,633, filed on Oct. 31, 2019.
Prior Publication US 2023/0299217 A1, Sep. 21, 2023
Int. Cl. G02B 6/12 (2006.01); G02B 6/124 (2006.01); G02B 6/13 (2006.01); G02B 6/136 (2006.01); H01L 31/02 (2006.01); H01L 31/0232 (2014.01); H01L 31/028 (2006.01); H01L 31/18 (2006.01)
CPC H01L 31/02327 (2013.01) [G02B 6/12004 (2013.01); G02B 6/124 (2013.01); G02B 6/131 (2013.01); G02B 6/136 (2013.01); H01L 31/028 (2013.01); H01L 31/1808 (2013.01); G02B 2006/12061 (2013.01); G02B 2006/12107 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a first doped region having a first doping type disposed in a semiconductor substrate;
a second doped region having a second doping type different than the first doping type disposed in the semiconductor substrate, wherein the first doped region and the second doped region are laterally spaced;
a waveguide structure disposed in the semiconductor substrate and laterally between the first doped region and the second doped region; and
a photodetector disposed at least partially in the semiconductor substrate and laterally between the first doped region and the second doped region, wherein:
the waveguide structure is configured to guide one or more photons into the photodetector;
the photodetector has an upper surface that continuously arcs between opposite sidewalls of the photodetector; and
the photodetector has a lower surface that continuously arcs between the opposite sidewalls, wherein the continuous arc of the lower surface reduces a dark current within the photodetector.