CPC H01L 31/022441 (2013.01) [H01L 31/02168 (2013.01); H01L 31/0236 (2013.01); H01L 31/02363 (2013.01); H01L 31/02366 (2013.01); H01L 31/0682 (2013.01); H01L 31/18 (2013.01); H01L 31/1804 (2013.01); Y02E 10/547 (2013.01); Y02P 70/50 (2015.11)] | 20 Claims |
1. A fabrication method of a back contact solar cell having a plurality of different conductive type semiconductor regions on a rear surface of a semiconductor substrate having a first conductive type, the method comprising:
forming a pyramid-shaped front texturing structure and a pyramid-shaped rear texturing structure at front and rear surfaces, respectively, of the semiconductor substrate;
forming thermal oxide layers on the front and rear surfaces, respectively, of the semiconductor substrate at the pyramid-shaped front and rear texturing structures;
forming first patterns by locally removing the thermal oxide layer formed on the rear surface of the semiconductor substrate at predetermined intervals, wherein the pyramid-shaped rear texturing structure is not present where the thermal oxide layer is partially removed;
forming first conductive type semiconductor regions on the rear surface of the semiconductor substrate through the first patterns;
forming, subsequent to the forming the first conductive type semiconductor regions, second patterns by locally removing the thermal oxide layer on the rear surface of the semiconductor substrate that remains at the predetermined intervals with the first patterns, wherein the pyramid-shaped rear texturing structure is not present where the thermal oxide layer is partially removed;
forming second conductive type semiconductor regions on the rear surface of the semiconductor substrate through the second patterns; and
forming first electrodes through the first patterns and second electrodes through the second patterns, wherein the first electrodes are in direct contact with the first conductive type semiconductor regions, and the second electrodes are in direct contact with the second conductive type semiconductor regions.
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