US 12,136,676 B2
Schottky diode and method for fabricating the same
You Seung Rim, Seoul (KR); Tai Young Kang, Gyeonggi-do (KR); and Sin Su Kyoung, Gyeonggi-do (KR)
Assigned to POWERCUBE SEMI INC., Gyeonggi-Do (KR)
Appl. No. 17/612,831
Filed by POWER CUBESEMI INC., Gyeonggi-do (KR)
PCT Filed Mar. 24, 2020, PCT No. PCT/KR2020/004013
§ 371(c)(1), (2) Date Nov. 19, 2021,
PCT Pub. No. WO2020/235796, PCT Pub. Date Nov. 26, 2020.
Claims priority of application No. 10-2019-0059050 (KR), filed on May 20, 2019.
Prior Publication US 2022/0223746 A1, Jul. 14, 2022
Int. Cl. H01L 29/872 (2006.01); H01L 29/06 (2006.01); H01L 29/47 (2006.01); H01L 29/66 (2006.01)
CPC H01L 29/872 (2013.01) [H01L 29/0619 (2013.01); H01L 29/47 (2013.01); H01L 29/66143 (2013.01)] 9 Claims
OG exemplary drawing
 
1. A Schottky diode, comprising:
a gallium oxide layer that is a semiconductor layer doped with a first-type dopant;
a cathode in ohmic contact with the gallium oxide layer; and
an anode having a Schottky contact metal layer in Schottky contact with the gallium oxide layer,
wherein the gallium oxide layer is in contact with an interface with the Schottky contact metal layer, contains a second-type dopant of a conductivity opposite to that of the first-type dopant, and has an interlayer which is a region where a concentration of the second-type dopant decreases as it moves away from an interface with the Schottky contact metal layer, the interlayer having a wider width than that of the Schottky contact metal layer.