| CPC H01L 29/7869 (2013.01) [H01L 29/78696 (2013.01)] | 11 Claims |
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1. A semiconductor device comprising:
a first conductive layer;
a first insulating layer;
a semiconductor layer;
a pair of second conductive layers; and
a second insulating layer,
wherein the first insulating layer is in contact with a top surface of the first conductive layer,
wherein the semiconductor layer is in contact with a top surface of the first insulating layer,
wherein the pair of second conductive layers are in contact with a top surface of the semiconductor layer,
wherein the pair of second conductive layers are apart from each other with a space therebetween,
wherein the space overlaps with the first conductive layer,
wherein the second conductive layer has a stacked-layer structure of a first conductive film, a second conductive film over the first conductive film, and a third conductive film over the second conductive film,
wherein the second insulating layer is in contact with a top surface of the semiconductor layer, a top surface of the first conductive film, a side surface of the first conductive film, a top surface of the third conductive film, and a side surface of the third conductive film,
wherein the semiconductor layer comprises indium and oxygen,
wherein the semiconductor layer has a composition falling within a range obtained by connecting first coordinates (1:0:0), second coordinates (2:1:0), third coordinates (14:7:1), fourth coordinates (7:2:2), fifth coordinates (14:4:21), sixth coordinates (2:0:3), and the first coordinates in this order with a straight line in a ternary diagram showing atomic ratios of indium to an element M and zinc, and
wherein the element M is one or more of gallium, aluminum, yttrium, and tin.
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