US 12,136,669 B2
High hole mobility transistor (HHMT) and method of manufacturing the same
Zilan Li, Guangdong (CN)
Assigned to GUANGDONG ZHINENG TECHNOLOGIES, CO. LTD., Guangdong (CN)
Appl. No. 17/603,297
Filed by GUANGDONG ZHINENG TECHNOLOGIES, CO. LTD., Guangdong (CN)
PCT Filed Sep. 30, 2019, PCT No. PCT/CN2019/109382
§ 371(c)(1), (2) Date Oct. 12, 2021,
PCT Pub. No. WO2020/206959, PCT Pub. Date Oct. 15, 2020.
Claims priority of application No. 201910291624.6 (CN), filed on Apr. 12, 2019.
Prior Publication US 2022/0199818 A1, Jun. 23, 2022
Int. Cl. H01L 29/778 (2006.01); H01L 29/04 (2006.01); H01L 29/06 (2006.01); H01L 29/16 (2006.01); H01L 29/20 (2006.01); H01L 29/66 (2006.01)
CPC H01L 29/7786 (2013.01) [H01L 29/045 (2013.01); H01L 29/0657 (2013.01); H01L 29/1608 (2013.01); H01L 29/2003 (2013.01); H01L 29/66431 (2013.01); H01L 29/66462 (2013.01)] 31 Claims
OG exemplary drawing
 
1. A high hole mobility transistor (HHMT), comprising:
a vertical interface which is substantially perpendicular to a substrate surface;
a channel layer disposed outside of the vertical interface;
a channel supply layer at least partially covering a first side of the channel layer, wherein in the channel layer a vertical two-dimensional hole gas 2DHG is formed on the first side adjacent to the channel layer and the channel supply layer;
a first electrode configured to being electronically connected to the vertical two-dimensional hole gas 2DHG;
a second electrode configured to being electronically connected to the vertical two-dimensional hole gas 2DHG; and
a gate electrode disposed outside of the channel supply layer.