US 12,136,667 B2
Transistor
Blend Mohamad, Grenoble (FR); and René Escoffier, Grenoble (FR)
Assigned to Commissariat à l'Énergie Atomique et aux Énergies Alternatives, Paris (FR)
Filed by Commissariat à l'Énergie Atomique et aux Énergies Alternatives, Paris (FR)
Filed on Feb. 9, 2022, as Appl. No. 17/668,254.
Claims priority of application No. 2101480 (FR), filed on Feb. 16, 2021.
Prior Publication US 2022/0262938 A1, Aug. 18, 2022
Int. Cl. H01L 21/00 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/778 (2006.01); H01L 21/8258 (2006.01); H01L 27/088 (2006.01)
CPC H01L 29/7783 (2013.01) [H01L 29/4236 (2013.01); H01L 29/66462 (2013.01); H01L 29/7788 (2013.01); H01L 21/8258 (2013.01); H01L 27/088 (2013.01)] 11 Claims
OG exemplary drawing
 
1. Device comprising:
a first high electron mobility transistor comprising:
a first gallium nitride layer;
a second layer made of a first semiconductor material located on top of and in contact with the first layer, so that an electrode gas can form at an interface between the first and second layers; and
a first gate region crossing the second layer and partially penetrating into the first layer; and
a second transistor located inside of the first region and comprising:
second and third regions made of a second doped semiconductor material of a first conductivity type, the second semiconductor material being different from gallium nitride; and
a fourth channel region made of the second semiconductor material, non intentionally doped or doped with a second conductivity type opposite to the first conductivity type, interposed between the second and third regions, wherein a conductive material extends along a first side of a vertical portion of the first region and contacts the second region.