US 12,136,664 B2
Semiconductor device and method for producing the same
Masayuki Aoike, Nagaokakyo (JP)
Assigned to Murata Manufacturing Co., Ltd., Kyoto-fu (JP)
Filed by Murata Manufacturing Co., Ltd., Kyoto-fu (JP)
Filed on Apr. 6, 2023, as Appl. No. 18/296,778.
Application 18/296,778 is a continuation of application No. 16/901,980, filed on Jun. 15, 2020, granted, now 11,677,018.
Claims priority of application No. 2019-115560 (JP), filed on Jun. 21, 2019; and application No. 2020-040801 (JP), filed on Mar. 10, 2020.
Prior Publication US 2023/0246094 A1, Aug. 3, 2023
Int. Cl. H01L 23/373 (2006.01); H01L 21/50 (2006.01); H01L 23/00 (2006.01); H01L 23/498 (2006.01); H01L 29/737 (2006.01)
CPC H01L 29/737 (2013.01) [H01L 21/50 (2013.01); H01L 23/49811 (2013.01); H01L 23/49838 (2013.01); H01L 24/14 (2013.01)] 6 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a substrate, the substrate including a first base and a second base disposed on or above the first base, the second base being composed of a material different from a material constituting the first base, and the first base having a higher thermal conductivity than the second base;
a circuit element;
a first base-side electrode disposed on or above a surface of a portion of the first base, the portion not overlapping the second base;
a second base-side electrode disposed on or above a surface of a portion of the second base and connected to the circuit element;
a first conductor protrusion for external connection, the first conductor protrusion being disposed on or above the first base-side electrode and connected to the circuit element or the first base-side electrode; and
a second conductor protrusion for external connection, the second conductor protrusion being connected to the second base-side electrode,
wherein
the first base is a base composed of an elemental semiconductor,
the second base is a base composed of a compound semiconductor,
the second base comprises a semiconductor base and an epitaxial layer disposed on or above the semiconductor base,
the circuit element is disposed on or above the semiconductor base, and
the second base-side electrode entirely covers the circuit element viewed in a direction normal toward the surface of the portion of the second base and directly contacts a portion of the epitaxial layer.