US 12,136,660 B2
Semiconductor device, and method for protecting low-k dielectric feature of semiconductor device
Cheng-Ming Lin, Hsinchu (TW); Han-Yu Lin, Hsinchu (TW); Wei-Yen Woon, Hsinchu (TW); and Mrunal Abhijith Khaderbad, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Jul. 8, 2021, as Appl. No. 17/370,265.
Prior Publication US 2023/0009745 A1, Jan. 12, 2023
Int. Cl. H01L 29/00 (2006.01); H01L 21/02 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/49 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01)
CPC H01L 29/6656 (2013.01) [H01L 21/02321 (2013.01); H01L 21/0259 (2013.01); H01L 29/0665 (2013.01); H01L 29/42392 (2013.01); H01L 29/4908 (2013.01); H01L 29/4983 (2013.01); H01L 29/66545 (2013.01); H01L 29/66742 (2013.01); H01L 29/78696 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a semiconductor feature; and
a first low-k dielectric feature formed on the semiconductor feature, and including a body portion and a surface portion,
wherein the surface portion conformally covers over the body portion, and contains silicon and at least one element that is contained in the body portion,
wherein the surface portion has a greater concentration of silicon than the body portion, and
wherein the surface portion is thinner than the body portion in a thickness direction.