US 12,136,654 B2
Method for manufacturing semiconductor device
Hiroki Miyake, Nisshin (JP)
Assigned to DENSO CORPORATION, Kariya (JP); MIRISE Technologies Corporation, Nisshin (JP); and TOYOTA JIDOSHA KABUSHIKI KAISHA, Toyota (JP)
Filed by DENSO CORPORATION, Kariya (JP); MIRISE Technologies Corporation, Nisshin (JP); and TOYOTA JIDOSHA KABUSHIKI KAISHA, Toyota (JP)
Filed on Jul. 24, 2023, as Appl. No. 18/357,276.
Application 18/357,276 is a division of application No. 17/398,060, filed on Aug. 10, 2021, granted, now 11,757,009.
Claims priority of application No. 2020-157824 (JP), filed on Sep. 18, 2020.
Prior Publication US 2023/0369417 A1, Nov. 16, 2023
Int. Cl. H01L 29/36 (2006.01); H01L 21/425 (2006.01); H01L 29/24 (2006.01); H01L 29/78 (2006.01); H01L 29/861 (2006.01); H01L 29/872 (2006.01)
CPC H01L 29/36 (2013.01) [H01L 21/425 (2013.01); H01L 29/24 (2013.01); H01L 29/7813 (2013.01); H01L 29/8613 (2013.01); H01L 29/872 (2013.01)] 5 Claims
OG exemplary drawing
 
1. A method for manufacturing a semiconductor device comprising:
reducing an electrically active donor concentration in a part of a region of a semiconductor substrate by annealing the semiconductor substrate having a N conductive type and made of a gallium oxide-based semiconductor; and
forming a first semiconductor layer provided by the region having a reduced electrically active donor concentration and a second semiconductor layer having a higher electrically active donor concentration than the first semiconductor layer and in contact with the first semiconductor layer, in the semiconductor substrate, wherein:
the annealing of the semiconductor substrate includes:
implanting an oxygen ion into the semiconductor substrate; and
after the implanting of the oxygen ion, annealing the semiconductor substrate.