US 12,136,653 B2
Silicon carbide wafer and semiconductor device applied the same
Jung Woo Choi, Cheonam-si (KR); Jong Hwi Park, Cheonam-si (KR); Jung-Gyu Kim, Cheonam-si (KR); Jung Doo Seo, Cheonam-si (KR); and Kap-Ryeol Ku, Cheonam-si (KR)
Assigned to SENIC Inc., Cheonan-si (KR)
Filed by SENIC Inc., Cheonan-si (KR)
Filed on Mar. 11, 2022, as Appl. No. 17/692,528.
Claims priority of application No. 10-2021-0041021 (KR), filed on Mar. 30, 2021.
Prior Publication US 2022/0320296 A1, Oct. 6, 2022
Int. Cl. H01L 29/16 (2006.01); H01L 21/02 (2006.01)
CPC H01L 29/1608 (2013.01) [H01L 21/02002 (2013.01)] 7 Claims
OG exemplary drawing
 
1. A silicon carbide wafer comprising one surface and another surface facing each other, wherein the one surface is a surface on which a silicon atom layer of a silicon carbide crystal is exposed and the other surface is a surface on which a carbon atom layer of a silicon carbide crystal is exposed, and wherein a number of peak signals per unit area having an intensity more than 1.2 times an average signal intensity of a spectrum in a photoluminescence signal intensity spectrum obtained by irradiating lasers on the one surface is 1/cm2 or less,
wherein the lasers irradiated on the silicon carbide wafer comprise a first laser having a predetermined incidence angle and a second laser being perpendicularly irradiated on the silicon carbide wafer, wherein the first laser and the second laser are directed at the same point, and wherein a wavelength of the first laser is 405 nm and a wavelength of the second laser is 355 nm, and
wherein a signal intensity of the spectrum is a signal intensity that is converted to grayscale.