CPC H01L 29/1608 (2013.01) [H01L 21/28017 (2013.01); H01L 24/05 (2013.01); H01L 24/29 (2013.01); H01L 29/42364 (2013.01); H01L 29/49 (2013.01); H01L 29/78 (2013.01); H01L 2224/05099 (2013.01); H01L 2224/29099 (2013.01)] | 18 Claims |
1. A semiconductor device comprising:
a semiconductor substrate;
a gate insulator provided on a surface of the semiconductor substrate;
a plurality of convex portions, formed of an insulator, and provided on and in direct contact with the gate insulator;
a bonding film, including silicon or aluminum, provided on the gate insulator; and
a gate pad layer provided above the bonding film,
wherein the gate pad layer includes titanium in at least a region in contact with the bonding film, and
the bonding film is provided between adjacent convex portions of the plurality of convex portions.
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