US 12,136,639 B2
Imaging element and electronic equipment
Masashi Ohura, Kanagawa (JP); and Yusuke Kohyama, Kanagawa (JP)
Assigned to Sony Semiconductor Solutions Corporation, Kanagawa (JP)
Appl. No. 17/289,817
Filed by SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa (JP)
PCT Filed Oct. 24, 2019, PCT No. PCT/JP2019/041608
§ 371(c)(1), (2) Date Apr. 29, 2021,
PCT Pub. No. WO2020/095689, PCT Pub. Date May 14, 2020.
Claims priority of application No. 2018-208679 (JP), filed on Nov. 6, 2018; and application No. 2019-118399 (JP), filed on Jun. 26, 2019.
Prior Publication US 2021/0399029 A1, Dec. 23, 2021
Int. Cl. H01L 27/146 (2006.01)
CPC H01L 27/1463 (2013.01) [H01L 27/14623 (2013.01); H01L 27/14627 (2013.01); H01L 27/14643 (2013.01); H01L 27/14683 (2013.01)] 17 Claims
OG exemplary drawing
 
1. An imaging element, comprising:
a substrate;
a first photoelectric conversion region provided in the substrate;
a second photoelectric conversion region provided in the substrate, the second photoelectric conversion region being adjacent to the first photoelectric conversion region;
a pixel isolation section provided in the substrate and between the first photoelectric conversion region and the second photoelectric conversion region; and
a junction region provided in a side wall of the pixel isolation section, the junction region including a first impurity region including first impurities and a second impurity region including second impurities,
wherein a length of a side of the first impurity region formed in a side wall of the pixel isolation section, the side perpendicularly intersecting two parallel sides of four sides of the pixel isolation section enclosing the first photoelectric conversion region, is larger than a length between the two parallel sides of the pixel isolation section,
wherein the first impurity region includes protruding portions on the second impurity region side, and
wherein a horizontal portion of the protruding portions has a greater length than a vertical surface of the protruding portions furthest from the pixel isolation section in a plan view.
 
14. Electronic equipment, comprising:
an imaging element including:
a substrate;
a first photoelectric conversion region provided in the substrate;
a second photoelectric conversion region provided in the substrate, the second photoelectric conversion region being adjacent to the first photoelectric conversion region;
a pixel isolation section provided in the substrate and between the first photoelectric conversion region and the second photoelectric conversion region; and
a junction region provided in a side wall of the pixel isolation section, the junction region including a first impurity region including first impurities and a second impurity region including second impurities,
wherein a length of a side of the first impurity region formed in a side wall of the pixel isolation section, the side perpendicularly intersecting two parallel sides of four sides of the pixel isolation section enclosing the first photoelectric conversion region, is larger than a length between the two parallel sides of the pixel isolation section,
wherein the first impurity region includes protruding portions on the second impurity region side and,
wherein a horizontal portion of the protruding portions has a greater length than a vertical surface of the protruding portions furthest from the pixel isolation section in a plan view.