US 12,136,635 B2
Imaging element and imaging device with selection and amplication transistor gates formed on same silicon channel
Naohiko Kimizuka, Kanagawa (JP)
Assigned to Sony Semiconductor Solutions Corporation, Kanagawa (JP)
Filed by Sony Semiconductor Solutions Corporation, Kanagawa (JP)
Filed on Sep. 15, 2023, as Appl. No. 18/468,002.
Application 18/468,002 is a continuation of application No. 17/294,239, previously published as PCT/JP2019/047778, filed on Dec. 6, 2019.
Claims priority of application No. 2018-239623 (JP), filed on Dec. 21, 2018.
Prior Publication US 2024/0021630 A1, Jan. 18, 2024
Int. Cl. H01L 27/146 (2006.01); H01L 29/78 (2006.01); H04N 25/77 (2023.01)
CPC H01L 27/14612 (2013.01) [H01L 29/7855 (2013.01); H04N 25/77 (2023.01)] 19 Claims
OG exemplary drawing
 
1. A light detecting element comprising:
a pixel unit that includes a selection transistor and an amplification transistor each constituted by a multigate transistor, wherein
a gate of the selection transistor is disposed on a first portion of a fin structure,
a gate of the amplification transistor is disposed on a second portion of the fin structure, and
the gates of the selection transistor and the amplification transistor are formed on a same silicon channel.