US 12,136,633 B2
Image sensors
Seungwook Lee, Hwaseong-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Feb. 9, 2022, as Appl. No. 17/667,620.
Claims priority of application No. 10-2021-0050015 (KR), filed on Apr. 16, 2021.
Prior Publication US 2022/0336506 A1, Oct. 20, 2022
Int. Cl. H01L 27/14 (2006.01); H01L 27/146 (2006.01)
CPC H01L 27/14603 (2013.01) [H01L 27/14614 (2013.01); H01L 27/14641 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An image sensor comprising:
a base substrate including a substrate layer having a first conductive type, a semiconductor layer on the substrate layer, and a buried insulation layer between the substrate layer and the semiconductor layer;
a photo sensing device in the substrate layer, the photo sensing device including an impurity region having a second conductive type that is different from the first conductive type;
a buried impurity region that is spaced apart from the photo sensing device, is in the substrate layer, and is adjacent to the buried insulation layer, the buried impurity region including an impurity region having the second conductive type;
a transfer gate including a vertical gate extending through the semiconductor layer and the buried insulation layer and extending into a portion of the substrate layer, wherein the portion of the substrate layer is between the photo sensing device and the buried impurity region; and
a planar gate on the semiconductor layer.