US 12,136,624 B2
Fin Field-Effect Transistor and method of forming the same
Duen-Huei Hou, Hsinchu (TW); Tsu Hao Wang, Hsinchu (TW); Chao-Cheng Chen, Hsinchu (TW); Chun-Hung Lee, Hsinchu (TW); Hsin-Chih Chen, Hsinchu (TW); and Kuo-Chin Liu, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Jul. 24, 2023, as Appl. No. 18/357,792.
Application 18/357,792 is a continuation of application No. 17/195,984, filed on Mar. 9, 2021, granted, now 11,749,681.
Claims priority of provisional application 63/029,018, filed on May 22, 2020.
Prior Publication US 2023/0369334 A1, Nov. 16, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 29/76 (2006.01); H01L 27/092 (2006.01); H01L 29/06 (2006.01); H01L 29/78 (2006.01); H01L 29/94 (2006.01)
CPC H01L 27/0924 (2013.01) [H01L 29/0649 (2013.01); H01L 29/7851 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a first semiconductor fin protruding from a substrate and including a first top portion;
a second semiconductor fin adjacent the first semiconductor fin and including a second top portion, wherein the first top portion vertically extends above and laterally bends toward the second top portion; and
a metal gate structure oriented perpendicular to and disposed over both the first and the second semiconductor fins.