US 12,136,621 B2
Bidirectional electrostatic discharge (ESD) protection device
Chih-Wei Chen, Zhubei (TW); Mei-Lian Fan, Hsinchu (TW); and Kun-Hsien Lin, Hsinchu (TW)
Assigned to Amazing Microelectronic Corp., New Taipei (TW)
Filed by AMAZING MICROELECTRONIC CORP., New Taipei (TW)
Filed on Jan. 11, 2022, as Appl. No. 17/647,627.
Prior Publication US 2023/0223398 A1, Jul. 13, 2023
Int. Cl. H01L 27/02 (2006.01)
CPC H01L 27/0262 (2013.01) 15 Claims
OG exemplary drawing
 
1. A bidirectional electrostatic discharge (ESD) protection device comprising:
at least one bipolar junction transistor; and
at least one silicon-controlled rectifier coupled to the at least one bipolar junction transistor in series, wherein an absolute value of a breakdown voltage of the at least one bipolar junction transistor is lower than that of the at least one silicon-controlled rectifier and an absolute value of a holding voltage of the at least one bipolar junction transistor is higher than that of the at least one silicon-controlled rectifier when an electrostatic discharge voltage is applied to the at least one bipolar junction transistor and the at least one silicon-controlled rectifier.