US 12,136,602 B2
Method of fabricating a semiconductor device
Ju-Il Choi, Seongnam-si (KR); Pil-Kyu Kang, Hwaseong-si (KR); Hoechul Kim, Seoul (KR); Hoonjoo Na, Seoul (KR); Jaehyung Park, Anyang-si (KR); and Seongmin Son, Hwaseong-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Oct. 14, 2021, as Appl. No. 17/501,133.
Application 17/501,133 is a continuation of application No. 16/404,841, filed on May 7, 2019, granted, now 11,152,317.
Claims priority of application No. 10-2018-0113157 (KR), filed on Sep. 20, 2018.
Prior Publication US 2022/0068852 A1, Mar. 3, 2022
Int. Cl. H01L 23/00 (2006.01); H01L 25/16 (2023.01); H01L 23/31 (2006.01); H01L 27/146 (2006.01)
CPC H01L 24/05 (2013.01) [H01L 24/08 (2013.01); H01L 25/167 (2013.01); H01L 23/3128 (2013.01); H01L 24/03 (2013.01); H01L 24/29 (2013.01); H01L 24/32 (2013.01); H01L 24/80 (2013.01); H01L 27/14621 (2013.01); H01L 27/14627 (2013.01); H01L 2224/02372 (2013.01); H01L 2224/02373 (2013.01); H01L 2224/024 (2013.01); H01L 2224/0346 (2013.01); H01L 2224/03614 (2013.01); H01L 2224/03616 (2013.01); H01L 2224/039 (2013.01); H01L 2224/0508 (2013.01); H01L 2224/05082 (2013.01); H01L 2224/05111 (2013.01); H01L 2224/05124 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/05155 (2013.01); H01L 2224/05166 (2013.01); H01L 2224/05181 (2013.01); H01L 2224/05184 (2013.01); H01L 2224/05564 (2013.01); H01L 2224/05572 (2013.01); H01L 2224/05584 (2013.01); H01L 2224/05611 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/08145 (2013.01); H01L 2224/2919 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/8083 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A method of fabricating a semiconductor device, the method comprising:
preparing a first pad structure including a first pad and a first bonding metal pad on the first pad;
preparing a second pad structure including a second pad and a second bonding metal pad on the second pad;
stacking the second pad structure on the first pad structure so that the first bonding metal pad and the second bonding metal pad face each other; and
forming a pad interconnection structure connecting the first pad and the second pad from the first bonding metal pad and the second bonding metal pad,
wherein:
the pad interconnection structure includes:
a central part,
a first intermediate part surrounding the central part,
a second intermediate part surrounding the first intermediate part, and
an outer part surrounding the second intermediate part,
a grain size of the outer part is less than a grain size of the second intermediate part,
the grain size of the second intermediate part is less than a grain size of the first intermediate part, and
the grain size of the first intermediate part is less than a grain size of the central part.