US 12,136,601 B1
Single-sided embeddable capacitors for packaged semiconductor devices
Carlos Andres Riera Cercado, Atlanta, GA (US); and Jose F. Solis Camara, Atlanta, GA (US)
Assigned to SARAS MICRO DEVICES, INC., Chandler, AZ (US)
Filed by Saras Micro Devices, Inc., Chandler, AZ (US)
Filed on Mar. 27, 2024, as Appl. No. 18/618,869.
Int. Cl. H01L 23/64 (2006.01); H01L 23/538 (2006.01); H01L 25/065 (2023.01); H01L 49/02 (2006.01); H10B 80/00 (2023.01)
CPC H01L 23/642 (2013.01) [H01L 23/5383 (2013.01); H01L 25/0652 (2013.01); H01L 28/40 (2013.01); H10B 80/00 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A method of manufacturing a capacitor embeddable in a substrate core of a semiconductor device, the method comprising:
providing a conductive substrate having a front side and a back side;
providing a conductive polymer layer on a dielectric layer formed on the front side of the conductive substrate, wherein the dielectric layer is conformal with a high surface area (HSA) portion of the conductive substrate on the front side of the conductive substrate;
providing a carbonaceous layer on the conductive polymer layer;
providing a front metallization layer on the carbonaceous layer, the front metallization layer being electrically connected to the conductive polymer layer;
providing a back metallization layer on the back side of the conductive substrate, the back metallization layer being electrically connected to the conductive substrate;
removing the HSA portion of the conductive substrate in one or more regions of the front side of the conductive substrate to produce a plurality of isolated islands of the HSA portion having the dielectric layer conformal therewith; and
providing a plurality of electrically isolated stacks respectively on the plurality of isolated islands, each of the stacks including a portion of the conductive polymer layer, a portion of the carbonaceous layer, and a portion of the front metallization layer.