US 12,136,600 B2
Grounded metal ring structure for through-silicon via
Shih-Chang Chen, Hsinchu (TW); Kun-Hsiang Lin, Hsinchu (TW); and Cheng-Chien Li, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Sep. 8, 2021, as Appl. No. 17/468,886.
Claims priority of provisional application 63/172,420, filed on Apr. 8, 2021.
Prior Publication US 2022/0328429 A1, Oct. 13, 2022
Int. Cl. H01L 23/58 (2006.01); H01L 21/768 (2006.01); H01L 23/48 (2006.01); H01L 23/528 (2006.01)
CPC H01L 23/585 (2013.01) [H01L 21/76898 (2013.01); H01L 23/481 (2013.01); H01L 23/5286 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor structure, comprising:
a substrate;
a through-silicon via (TSV) in contact with the substrate; and
a metal ring structure laterally surrounding the TSV, wherein the metal ring structure comprises:
one or more metal rings arranged as a stack, wherein a metal ring of the one or more metal rings comprises a non-smooth inner surface; and
one or more metal vias interposed between two adjacent metal rings of the one or more metal rings,
wherein the metal ring structure is electrically coupled to the substrate through one or more conductive structures.