US 12,136,592 B2
Method for manufacturing semiconductor structure having a porous structure
Tse-Yao Huang, Taipei (TW)
Assigned to NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed by NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed on May 12, 2022, as Appl. No. 17/742,612.
Prior Publication US 2023/0369202 A1, Nov. 16, 2023
Int. Cl. H01L 23/522 (2006.01); H01L 21/768 (2006.01); H01L 23/00 (2006.01)
CPC H01L 23/5226 (2013.01) [H01L 21/76802 (2013.01); H01L 21/76843 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01)] 11 Claims
OG exemplary drawing
 
1. A method of manufacturing a semiconductor structure, comprising:
forming a dielectric layer over a substrate;
forming an opening in the dielectric layer;
forming a first liner conformal to the opening;
forming a porous layer in the opening and surrounded by the first liner;
forming a conductive via penetrating the dielectric layer; and
forming a conductive pad over the dielectric layer, wherein the conductive pad covers the porous layer and the conductive via.