US 12,136,591 B2
Through electrode substrate and semiconductor device
Takamasa Takano, Tokyo (JP); and Satoru Kuramochi, Tokyo (JP)
Assigned to DAI NIPPON PRINTING CO., LTD., Tokyo (JP)
Filed by DAI NIPPON PRINTING CO., LTD., Tokyo (JP)
Filed on May 15, 2023, as Appl. No. 18/197,157.
Application 18/197,157 is a continuation of application No. 17/168,631, filed on Feb. 5, 2021, granted, now 11,742,273.
Application 17/168,631 is a continuation of application No. 16/447,003, filed on Jun. 20, 2019, granted, now 10,950,533.
Application 16/447,003 is a continuation of application No. PCT/JP2017/045575, filed on Dec. 19, 2017.
Claims priority of application No. 2016-248415 (JP), filed on Dec. 21, 2016; application No. 2017-038412 (JP), filed on Mar. 1, 2017; and application No. 2017-100924 (JP), filed on May 22, 2017.
Prior Publication US 2023/0282557 A1, Sep. 7, 2023
Int. Cl. H01L 23/498 (2006.01); H01L 21/48 (2006.01); H01L 23/00 (2006.01); H01L 23/12 (2006.01); H01L 23/538 (2006.01); H01L 25/065 (2023.01); H01L 25/16 (2023.01); H01L 49/02 (2006.01); H05K 1/11 (2006.01); H05K 3/28 (2006.01)
CPC H01L 23/49827 (2013.01) [H01L 21/486 (2013.01); H01L 23/12 (2013.01); H01L 23/49816 (2013.01); H01L 23/49833 (2013.01); H01L 23/49838 (2013.01); H01L 23/5384 (2013.01); H01L 23/5386 (2013.01); H01L 24/16 (2013.01); H01L 24/48 (2013.01); H01L 24/73 (2013.01); H01L 25/0652 (2013.01); H01L 25/0657 (2013.01); H01L 25/16 (2013.01); H01L 28/10 (2013.01); H01L 28/40 (2013.01); H01L 28/60 (2013.01); H05K 1/11 (2013.01); H05K 3/28 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48106 (2013.01); H01L 2224/48225 (2013.01); H01L 2224/73257 (2013.01); H01L 2225/0651 (2013.01); H01L 2225/06517 (2013.01); H01L 2225/06548 (2013.01); H01L 2225/06572 (2013.01); H01L 2924/19011 (2013.01); H01L 2924/19041 (2013.01); H01L 2924/19042 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A substructure comprising:
a substrate;
a ground layer on the substrate;
a first conductive layer on the ground layer;
a first insulating layer having a first material on the first conductive layer; and
a second insulating layer having a second material different from the first material on the first insulating layer,
wherein:
the second insulating layer has a first part on the first insulating layer, a second part in contact with at least a part of a side surface of the first conductive layer and a side surface of the ground layer, and a third part extending from the second part and covering the substrate,
a distance between the third part and the substrate is shorter than a distance between the first part and the substrate, and
a thickness of the first conductive layer is thicker than a thickness of the ground layer.