US 12,136,589 B2
Semiconductor device
Yoshizo Osumi, Kyoto (JP); Taro Nishioka, Kyoto (JP); Tomohira Kikuchi, Kyoto (JP); and Tsunehisa Ono, Kyoto (JP)
Assigned to ROHM CO., LTD., Kyoto (JP)
Filed by ROHM CO., LTD., Kyoto (JP)
Filed on Nov. 11, 2021, as Appl. No. 17/454,576.
Application 17/454,576 is a continuation of application No. PCT/JP2020/018144, filed on Apr. 28, 2020.
Claims priority of application No. 2019-108677 (JP), filed on Jun. 11, 2019.
Prior Publication US 2022/0068776 A1, Mar. 3, 2022
Int. Cl. H01L 23/495 (2006.01); H01L 23/00 (2006.01); H01L 25/065 (2023.01); H01L 25/07 (2006.01)
CPC H01L 23/49575 (2013.01) [H01L 24/32 (2013.01); H01L 24/48 (2013.01); H01L 24/49 (2013.01); H01L 24/73 (2013.01); H01L 25/0655 (2013.01); H01L 25/072 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/48137 (2013.01); H01L 2224/48245 (2013.01); H01L 2224/4901 (2013.01); H01L 2224/73265 (2013.01)] 9 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a first semiconductor chip to which a first power-supply voltage is supplied;
a second semiconductor chip to which a second power-supply voltage having a higher potential than the first power-supply voltage is supplied;
a first lead frame including a chip mount surface on which the first semiconductor chip is mounted;
a second lead frame including a chip mount surface on which the second semiconductor chip is mounted;
a connection bonding wire electrically connecting the first semiconductor chip and the second semiconductor chip to each other;
a sealing resin provided to fill a gap between the first lead frame and the second lead frame to cover a circumference of each of the first semiconductor chip, the second semiconductor chip, and the respective chip mount surfaces of the first lead frame and the second lead frame; and
an insulating protection film including a material having higher electrical breakdown voltage than a material included in the sealing resin and arranged to cover surfaces of the first lead frame and the second lead frame in regions opposed to each other inside the sealing resin only in a proximity region where a low voltage side region to which the first power-supply voltage is applied and a high voltage side region to which the second power-supply voltage is applied are opposed to each other and are proximate to each other.