| CPC H01L 23/49503 (2013.01) [H01L 23/49579 (2013.01); H01L 24/48 (2013.01); H01L 21/565 (2013.01); H01L 2924/10253 (2013.01)] | 38 Claims |

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1. A semiconductor device, comprising: a silicon die having a metal material coating applied on one side; a lead frame, comprising: a mounting pad having an area smaller than an area of the silicon die, the silicon die being mounted on the lead frame via the mounting pad; and an etched area extending vertically from a first side of the lead frame to an opposing second side of the lead frame and at least partially filled with a non-conductive mold compound on a side of the lead frame that comes into direct contact with an end of the silicon die along an edge of the silicon die; and a volume of epoxy material dispensed onto the lead frame along a length of the metal material coating to form a fillet weld on a side of the silicon die configured to adhere the silicon die to the lead frame and to prevent the metal material coating from coming into direct contact with the lead frame.
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