US 12,136,586 B2
Semiconductor devices having a conductive layer stacking with an insulating layer and a spacer structure through the conductive layer
Linchun Wu, Wuhan (CN); Kun Zhang, Wuhan (CN); Zhong Zhang, Wuhan (CN); Wenxi Zhou, Wuhan (CN); and Zhiliang Xia, Wuhan (CN)
Assigned to YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan (CN)
Filed by YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan (CN)
Filed on Dec. 16, 2022, as Appl. No. 18/083,339.
Application 18/083,339 is a continuation of application No. 17/020,473, filed on Sep. 14, 2020, granted, now 11,562,945.
Application 17/020,473 is a continuation of application No. PCT/CN2020/106068, filed on Jul. 31, 2020.
Prior Publication US 2023/0118742 A1, Apr. 20, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 23/48 (2006.01); H01L 21/48 (2006.01); H10B 43/10 (2023.01); H10B 43/27 (2023.01); H10B 43/35 (2023.01); H10B 43/40 (2023.01)
CPC H01L 23/481 (2013.01) [H01L 21/4814 (2013.01); H10B 43/10 (2023.02); H10B 43/27 (2023.02); H10B 43/35 (2023.02); H10B 43/40 (2023.02)] 19 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
an insulating layer;
a conductive layer stacking with the insulating layer;
a spacer structure through the conductive layer;
a contact structure in the spacer structure and extending vertically through the insulating layer; and
a channel structure comprising a semiconductor channel, a portion of the semiconductor channel being in contact with the conductive layer,
wherein the contact structure comprises a first contact portion and a second contact portion in contact with each other; and
a lateral cross-sectional area of the second contact portion is greater than a lateral cross-sectional area of the first contact portion.