US 12,136,582 B2
Power module and power conversion device
Yoshinori Yokoyama, Tokyo (JP); Tetsu Negishi, Tokyo (JP); and Koji Yamazaki, Tokyo (JP)
Assigned to MITSUBISHI ELECTRIC CORPORATION, Tokyo (JP)
Appl. No. 17/780,519
Filed by Mitsubishi Electric Corporation, Tokyo (JP)
PCT Filed Dec. 26, 2019, PCT No. PCT/JP2019/051238
§ 371(c)(1), (2) Date May 27, 2022,
PCT Pub. No. WO2021/130989, PCT Pub. Date Jul. 1, 2021.
Prior Publication US 2022/0415747 A1, Dec. 29, 2022
Int. Cl. H01L 23/48 (2006.01); H01L 23/053 (2006.01); H01L 23/367 (2006.01); H05K 3/32 (2006.01)
CPC H01L 23/3675 (2013.01) [H01L 23/053 (2013.01); H05K 3/321 (2013.01)] 21 Claims
OG exemplary drawing
 
1. A power module comprising:
at least one semiconductor device;
an insulating substrate having an insulating layer, a circuit layer provided on an upper surface of the insulating layer, and a metal layer provided on a lower surface of the insulating layer;
a sintering joining member with an upper surface larger in outer circumference than a back surface of the at least one semiconductor device to join together the back surface of the at least one semiconductor device and an upper surface of the circuit layer on an upper-surface side of the insulating layer;
a base plate joined to the lower surface of the insulating substrate; and
a wiring member joined to a front surface of the at least one semiconductor device, wherein
the elastic moduli of members are increased in the following order: the at least one semiconductor device; a structure in which the base plate and the insulating substrate are joined together; the wiring member; and the sintering joining member, and
the upper surface of the circuit layer provided on the upper surface of the insulating substrate has a groove that is filled with the sintering joining member.