US 12,136,579 B2
Package structure and method for manufacturing the same
Hsu-Nan Fang, Kaohsiung (TW)
Assigned to ADVANCED SEMICONDUCTOR ENGINEERING, INC., Kaohsiung (TW)
Filed by Advanced Semiconductor Engineering, Inc., Kaohsiung (TW)
Filed on Jul. 25, 2023, as Appl. No. 18/226,210.
Application 18/226,210 is a continuation of application No. 17/177,997, filed on Feb. 17, 2021, granted, now 11,710,675.
Prior Publication US 2023/0369154 A1, Nov. 16, 2023
Int. Cl. H01L 23/31 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 23/00 (2006.01); H01L 23/367 (2006.01); H01L 23/373 (2006.01)
CPC H01L 23/3142 (2013.01) [H01L 21/4882 (2013.01); H01L 21/565 (2013.01); H01L 23/367 (2013.01); H01L 23/373 (2013.01); H01L 24/13 (2013.01); H01L 24/20 (2013.01); H01L 2224/13026 (2013.01); H01L 2224/2101 (2013.01); H01L 2224/214 (2013.01); H01L 2924/3511 (2013.01)] 13 Claims
OG exemplary drawing
 
1. A package structure, comprising:
an electronic device;
a heat spreader;
an intermediate layer interposed between the electronic device and the heat spreader, wherein a width of the intermediate layer is greater than a width of the electronic device; and
an encapsulant at least partially encapsulating the electronic device, wherein the electronic device includes a plurality of electrical contacts, and a surface of the encapsulant is substantially coplanar with a plurality of surfaces of the electrical contacts, wherein one of the plurality of electrical contacts is consisted of a first portion and a second portion, the first portion is closer to the intermediate layer than the second portion is, and the first portion is narrower than the second portion in a cross section, wherein a solder is disposed under the one of the plurality of electrical contacts.