US 12,136,567 B2
Fully self-aligned interconnect structure
Hsin-Ping Chen, Hsinchu (TW); Shau-Lin Shue, Hsinchu (TW); and Min Cao, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu (TW)
Filed on Jun. 13, 2022, as Appl. No. 17/838,723.
Application 17/838,723 is a division of application No. 16/895,338, filed on Jun. 8, 2020, granted, now 11,361,994.
Prior Publication US 2022/0328351 A1, Oct. 13, 2022
Int. Cl. H01L 21/768 (2006.01); H01L 21/3213 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01)
CPC H01L 21/76897 (2013.01) [H01L 21/32133 (2013.01); H01L 21/76802 (2013.01); H01L 21/76843 (2013.01); H01L 21/76877 (2013.01); H01L 23/5226 (2013.01); H01L 23/5283 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor structure, comprising:
a semiconductor substrate;
a first ILD layer disposed over the semiconductor substrate;
a patterned metal structure disposed in the first ILD layer, the patterned metal structure including a metal plug and a first metal feature, the patterned metal structure having a continuous sidewall slope from the metal plug to the first metal feature, and the patterned metal structure having a top surface;
a second metal feature directly contacting the top surface of the patterned metal structure; and
a first barrier layer on bottom and sidewall surfaces of the second metal feature.
 
18. A semiconductor structure, comprising:
a first ILD layer disposed over a substrate;
a patterned metal structure disposed in the first ILD layer, the patterned metal structure including a metal plug and a first metal layer having a first and second metal lines, the patterned metal structure having a continuous sidewall slope from the metal plug to the first metal line;
a second ILD layer disposed over the first ILD layer;
a second metal layer disposed in the second ILD layer and including a third and fourth metal lines, the third metal line directly contacting a top surface of the metal plug; and
a first barrier layer disposed in the first ILD layer, wherein the metal plug includes
a first sidewall directly contacting the first ILD layer, and
a second sidewall directly contacting the first barrier layer and being separated from the first ILD layer by the first barrier layer.