US 12,136,552 B2
Toposelective vapor deposition using an inhibitor
Andrea Illiberi, Leuven (BE); Varun Sharma, Helsinki (FI); Michael Givens, Oud-Heverlee (BE); Marko Tuominen, Helsinki (FI); and Shaoren Deng, Ghent (BE)
Assigned to ASM IP Holding B.V., Almere (NL)
Filed by ASM IP HOLDING B.V., Almere (NL)
Filed on Dec. 6, 2021, as Appl. No. 17/457,764.
Claims priority of provisional application 63/123,136, filed on Dec. 9, 2020.
Prior Publication US 2022/0181163 A1, Jun. 9, 2022
Int. Cl. H01L 21/311 (2006.01); C23C 16/04 (2006.01); C23C 16/455 (2006.01); C23C 16/46 (2006.01); C23C 16/56 (2006.01); H01L 21/02 (2006.01)
CPC H01L 21/31133 (2013.01) [C23C 16/042 (2013.01); C23C 16/455 (2013.01); C23C 16/46 (2013.01); C23C 16/56 (2013.01); H01L 21/0228 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of depositing a layer on a substrate comprising a recess, wherein the method comprises:
providing the substrate comprising the recess in a reaction chamber;
depositing an inhibition material on the substrate to fill the recess;
removing a first part of the inhibition material from the substrate to expose a first deposition area; and
depositing an etch-stop layer on the first deposition area by a selective vapor deposition process;
removing a second part of the inhibition material after depositing the etch-stop layer; and
performing an isotropic etching process to modify geometry of the recess after removing the second part of the inhibition material.