CPC H01L 21/2255 (2013.01) [H01L 21/31111 (2013.01); H01L 21/31144 (2013.01); H01L 27/092 (2013.01)] | 19 Claims |
1. A method for manufacturing a semiconductor structure, comprising:
providing a substrate, the substrate comprising a first region, and a second region located outside the first region;
forming a doped layer doped with a preset metal on the substrate corresponding to the second region;
forming a dielectric layer on the substrate corresponding to the first region, and on the doped layer corresponding to the second region;
forming a first diffusion film layer on the dielectric layer, the first diffusion film layer comprising a first metal oxide layer, and a thickness of the first diffusion film layer being not less than a thickness of the doped layer;
forming a hard mask on the first diffusion film layer by using a spin coating method;
etching each film layer corresponding to the first region and the second region toward the substrate, until the first diffusion film layer corresponding to the first region is exposed;
removing the first metal oxide layer remaining on the dielectric layer corresponding to the second region;
forming a second diffusion film layer on the first diffusion film layer corresponding to the first region, and on the dielectric layer corresponding to the second region, the second diffusion film layer comprising a second metal oxide layer; and
performing heat treatment on remaining film layers corresponding to the first region and the second region.
|