US 12,136,549 B2
Plasma-enhanced chemical vapor deposition of carbon hard-mask
Byung Seok Kwon, San Jose, CA (US); Prashant Kumar Kulshreshtha, San Jose, CA (US); Kwangduk Douglas Lee, Redwood City, CA (US); Bushra Afzal, Saratoga, CA (US); Sungwon Ha, Palo Alto, CA (US); Vinay K. Prabhakar, Cupertino, CA (US); Viren Kalsekar, Sunnyvale, CA (US); Satya Teja Babu Thokachichu, San Jose, CA (US); and Edward P. Hammond, IV, Hillsborough, CA (US)
Assigned to APPLIED MATERIALS, INC., Santa Clara, CA (US)
Appl. No. 16/982,789
Filed by Applied Materials, Inc., Santa Clara, CA (US)
PCT Filed Mar. 21, 2019, PCT No. PCT/US2019/023306
§ 371(c)(1), (2) Date Sep. 21, 2020,
PCT Pub. No. WO2019/209433, PCT Pub. Date Oct. 31, 2019.
Claims priority of provisional application 62/662,093, filed on Apr. 24, 2018.
Prior Publication US 2021/0043455 A1, Feb. 11, 2021
Int. Cl. H01L 21/033 (2006.01); C23C 16/26 (2006.01); C23C 16/46 (2006.01); C23C 16/505 (2006.01); H01L 21/02 (2006.01)
CPC H01L 21/0332 (2013.01) [C23C 16/26 (2013.01); C23C 16/46 (2013.01); C23C 16/505 (2013.01); H01L 21/02115 (2013.01); H01L 21/02274 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
heating a substrate contained within a process chamber to a temperature in a range from about 100° C. to about 700° C.;
producing a plasma with a power generator emitting an RF power of greater than 3 KW;
flowing a hydrocarbon precursor into the plasma within the process chamber; and
forming a carbon hard-mask layer on the substrate at a rate of greater than 5,000 Å/min, wherein the carbon hard-mask layer is formed to a thickness of greater than 2.5 μm to about 10 μm.