US 12,136,546 B2
Semiconductor device, manufacturing method thereof, and semiconductor storage device
Masayuki Kitamura, Yokkaichi (JP)
Assigned to Kioxia Corporation, Tokyo (JP)
Filed by Kioxia Corporation, Tokyo (JP)
Filed on Nov. 30, 2022, as Appl. No. 18/072,441.
Application 18/072,441 is a division of application No. 16/817,814, filed on Mar. 13, 2020, abandoned.
Claims priority of application No. 2019-169528 (JP), filed on Sep. 18, 2019.
Prior Publication US 2023/0093431 A1, Mar. 23, 2023
Int. Cl. H01L 21/02 (2006.01); H01L 29/24 (2006.01); H01L 29/49 (2006.01)
CPC H01L 21/02565 (2013.01) [H01L 29/4966 (2013.01); H01L 29/24 (2013.01)] 5 Claims
OG exemplary drawing
 
1. A semiconductor storage device comprising:
a plurality of conductive films stacked apart from each other in a first direction;
a plurality of oxide films that are in contact with the conductive films in the first direction and are stacked via the conductive films;
a semiconductor layer penetrating through the conductive films and the oxide films in the first direction; and
a charge storage layer arranged between the semiconductor layer and the conductive films in a second direction crossing the first direction, wherein
the oxide films contain a first element different from oxygen,
the conductive films contain a tungsten element and oxygen,
a volume density of the oxygen in the conductive film is 1.0×1016 atoms/cm3 to less than 2.38×1022 atoms/cm3, and
the conductive films consist of the tungsten element and the oxygen.