US 12,136,545 B2
Method of manufacturing semiconductor device, substrate processing apparatus and non-transitory computer-readable recording medium
Takashi Yahata, Toyama (JP); and Toshiyuki Kikuchi, Toyama (JP)
Assigned to Kokusai Electric Corporation, Tokyo (JP)
Filed by Kokusai Electric Corporation, Tokyo (JP)
Filed on Mar. 18, 2021, as Appl. No. 17/205,822.
Claims priority of application No. 2020-048622 (JP), filed on Mar. 19, 2020.
Prior Publication US 2021/0296111 A1, Sep. 23, 2021
Int. Cl. H01L 21/02 (2006.01); C23C 16/34 (2006.01); C23C 16/44 (2006.01); C23C 16/46 (2006.01)
CPC H01L 21/0228 (2013.01) [C23C 16/345 (2013.01); C23C 16/4412 (2013.01); C23C 16/46 (2013.01); H01L 21/0217 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A method of processing a substrate, comprising:
(a) forming a film by performing a cycle a predetermined number of times, the cycle comprising:
(a-1) supplying a gas to a substrate in a process chamber; and
(a-2) vacuum-exhausting an inner atmosphere of the process chamber; and
(b) generating a predetermined temperature difference between a front surface of the substrate and a back surface of the substrate at a predetermined timing during (a),
wherein a temperature on the front surface of the substrate is set at least temporarily higher than a temperature on the back surface of the substrate at a timing of vacuum-exhausting the inner atmosphere of the process chamber.