CPC H01J 37/32724 (2013.01) [C23C 14/30 (2013.01); C23C 14/50 (2013.01); C23C 14/541 (2013.01); H01J 2237/002 (2013.01); H01J 2237/2007 (2013.01); H01J 2237/3323 (2013.01); H10K 71/166 (2023.02)] | 24 Claims |
1. A substrate processing apparatus, comprising:
a titanium cooling plate having an upper surface and a lower surface opposite to the upper surface;
an electrostatic chuck including a first dielectric layer provided on the lower surface of the titanium cooling plate, an electrode layer provided on the first dielectric layer, and a second dielectric layer provided on the first dielectric layer and the electrode layer, wherein the electrostatic chuck is configured to chuck a glass substrate supplied from below using an electrostatic force; and
a yoke plate positioned on the upper surface of the titanium cooling plate, wherein the yoke plate is configured to chuck a mask supplied from below the glass substrate using a magnetic force,
wherein the titanium cooling plate further includes:
a first channel provided from the upper surface toward the lower surface and having a first width;
a second channel provided from the first channel toward the lower surface and having a second width smaller than the first width; and
a titanium cover plate coupled to the first channel, and
wherein the titanium cooling plate provides a cooling flow path using the second channel, and the cooling flow path is configured to allow a cooling medium to flow.
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