US 12,136,539 B1
Semiconductor device fabrication apparatus
Jong Kyu Lee, Seoul (KR); Hyun Soo Lee, Seoul (KR); Il Gu Yong, Seoul (KR); Do Hyun Choi, Seoul (KR); and Ho Geun Han, Seoul (KR)
Assigned to SK Enpulse Co., Ltd., Gyeonggi-do (KR)
Filed by SK enpulse Co., Ltd., Gyeonggi-do (KR)
Filed on Apr. 26, 2024, as Appl. No. 18/647,944.
Claims priority of application No. 10-2023-0054455 (KR), filed on Apr. 26, 2023; application No. 10-2023-0054456 (KR), filed on Apr. 26, 2023; and application No. 10-2023-0054457 (KR), filed on Apr. 26, 2023.
Int. Cl. H01J 37/32 (2006.01); C23C 16/455 (2006.01)
CPC H01J 37/32541 (2013.01) [C23C 16/45565 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An upper electrode, comprising:
a flat upper surface;
a lower surface facing the upper surface; and
a thickness from the upper surface to the lower surface,
wherein the lower surface comprises a first profile corresponding to a central area of the lower surface and having a first thickness change rate of −0.1 to 0;
a second profile surrounding the first profile and having a second thickness change rate;
a third profile surrounding the first profile and having a third thickness change rate of −0.115 to −0.122;
a fourth profile surrounding the third profile and having a fourth thickness change rate; and
a fifth profile surrounding the fourth profile and having a fifth thickness change rate of −0.003 to 0.003,
wherein the first thickness change rate, the second thickness change rate, the third thickness change rate, the fourth thickness change rate, and the fifth thickness change rate are values obtained by dividing a change in thickness by a change in radius along a horizontal direction parallel to the upper surface from a center of the lower surface.