US 12,136,536 B2
Electrostatic chuck with multiple radio frequency meshes to control plasma uniformity
Edward P. Hammond, IV, Hillsborough, CA (US); and Jonghoon Baek, Saratoga, CA (US)
Assigned to APPLIED MATERIALS, INC., Santa Clara, CA (US)
Appl. No. 16/970,110
Filed by Applied Materials, Inc., Santa Clara, CA (US)
PCT Filed Feb. 28, 2019, PCT No. PCT/US2019/020001
§ 371(c)(1), (2) Date Aug. 14, 2020,
PCT Pub. No. WO2019/169102, PCT Pub. Date Sep. 6, 2019.
Claims priority of provisional application 62/636,437, filed on Feb. 28, 2018.
Prior Publication US 2021/0166915 A1, Jun. 3, 2021
Int. Cl. H01J 37/32 (2006.01); C23C 16/458 (2006.01); C23C 16/509 (2006.01); H01L 21/683 (2006.01); H01L 21/67 (2006.01)
CPC H01J 37/32174 (2013.01) [C23C 16/4587 (2013.01); C23C 16/509 (2013.01); H01J 37/32568 (2013.01); H01J 37/32715 (2013.01); H01L 21/6833 (2013.01); H01J 2237/2007 (2013.01); H01J 2237/3321 (2013.01); H01J 2237/334 (2013.01); H01L 21/67069 (2013.01)] 24 Claims
OG exemplary drawing
 
1. A semiconductor processing chamber, comprising:
a pedestal disposed in the semiconductor processing chamber, the pedestal having a first electrode and a second electrode circumferentially surrounding the first electrode;
a high frequency power source and a low frequency power source coupled to both of the first electrode and the second electrode;
a power splitter disposed between the high frequency power source and the low frequency power source, and the first electrode and the second electrode; and
an electrode tuning circuit coupled to both of the first electrode and the second electrode, the electrode tuning circuit comprising:
a plurality of capacitors, one of the plurality of capacitors directly coupled to the high frequency power source through the power splitter, and
an inductor directly coupled to the low frequency power source through the power splitter.