US 12,136,517 B2
Capacitor structure and manufacturing method and operating method thereof
Hsin-Yu Lai, Hsinchu (TW); and Katherine H. Chiang, New Taipei (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed on Jul. 8, 2021, as Appl. No. 17/370,593.
Prior Publication US 2023/0008075 A1, Jan. 12, 2023
Int. Cl. H01G 4/10 (2006.01); H01G 4/33 (2006.01)
CPC H01G 4/10 (2013.01) [H01G 4/33 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A capacitor structure, comprising:
a first electrode and a second electrode;
a dielectric layer between the first electrode and the second electrode;
an oxygen donor layer between the dielectric layer and the second electrode, wherein the oxygen donor layer comprises a plurality of oxygen atoms, and a concentration of the plurality of oxygen atoms in the oxygen donor layer increases along a thickness direction from a first surface proximal to the dielectric layer to a second surface proximal to the second electrode;
a conductive layer between the oxygen donor layer and the dielectric layer, wherein a metal atom of the conductive layer is same as a metal atom of the oxygen donor layer; and
an interfacial layer between the dielectric layer and first electrode, wherein a metal atom of the interfacial layer is same as a metal atom of the first electrode,
wherein the metal atom of the first electrode is different from the metal atom of the oxygen donor layer,
wherein the interfacial layer has a first thickness when a first net positive charge is collected on the first electrode and a second thickness when a second net positive charge is collected on the first electrode, and the second thickness is greater than the first thickness.