US 12,136,471 B2
PUF applications in memories
Chin-Hung Chang, Tainan (TW); Chia-Jung Chen, Hsinchu (TW); Ken-Hui Chen, Hsinchu (TW); and Kuen-Long Chang, Taipei (TW)
Assigned to MACRONIX INTERNATIONAL CO., LTD., Hsinchu (TW)
Filed by MACRONIX INTERNATIONAL CO., LTD., Hsinchu (TW)
Filed on Aug. 8, 2023, as Appl. No. 18/231,611.
Application 18/231,611 is a continuation of application No. 17/834,287, filed on Jun. 7, 2022, granted, now 11,763,867.
Application 17/834,287 is a continuation of application No. 17/087,085, filed on Nov. 2, 2020, granted, now 11,380,379, issued on Jul. 5, 2022.
Prior Publication US 2023/0386541 A1, Nov. 30, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. G11C 7/24 (2006.01); G06F 21/44 (2013.01); H04L 9/32 (2006.01)
CPC G11C 7/24 (2013.01) [G06F 21/44 (2013.01); H04L 9/3278 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A memory device, comprising:
an array of memory cells;
a physically unclonable function (PUF) circuit in the memory device to generate PUF codes;
a deterministic random bit generator (DRBG) to generate a sequence of at least pseudo random numbers;
a data path directly connecting the array of memory cells and the DRBG, the data path including (i) a first path, having first and second endpoints, the first endpoint connecting a first circuit comprising a first set of memory cells at a first location in the array of memory cells storing a PUF code, and the second endpoint connecting to the DRBG in the memory device, and (ii) a second path, having first and second endpoints, the first endpoint connecting the DRBG, and the second endpoint connecting to a second set of memory cells at a second location in the array of memory cells for storing keys.