US 12,136,466 B2
Header layout design including backside power rail
Haruki Mori, Hsinchu (TW); Chien-Chi Tien, Hsinchu (TW); Chia-En Huang, Hsinchu (TW); Hidehiro Fujiwara, Hsinchu (TW); Yen-Huei Chen, Hsinchu (TW); and Feng-Lun Chen, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Jul. 31, 2023, as Appl. No. 18/362,270.
Application 18/362,270 is a continuation of application No. 17/852,659, filed on Jun. 29, 2022, granted, now 11,715,501.
Application 17/852,659 is a continuation of application No. 17/085,067, filed on Oct. 30, 2020, granted, now 11,398,257, issued on Jul. 26, 2022.
Claims priority of provisional application 62/954,914, filed on Dec. 30, 2019.
Prior Publication US 2023/0410851 A1, Dec. 21, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. G11C 5/14 (2006.01); G11C 5/06 (2006.01); H01L 23/50 (2006.01); H01L 23/528 (2006.01)
CPC G11C 5/14 (2013.01) [G11C 5/06 (2013.01); H01L 23/50 (2013.01); H01L 23/5286 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A header circuitry comprising a plurality of switching devices, the header circuitry comprising:
a first region of a first conductivity type;
a first section in the first region comprising a first backside power rail (BPR) disposed in a first direction, the first BPR comprising a first voltage source providing a first voltage;
a second section in the first region comprising a second BPR disposed in the first direction, the second BPR comprising a second voltage source providing a second voltage that is different from the first voltage;
a second region of a second conductivity type disposed in the first direction adjacent the first region of the first conductivity type, the second region comprising a third BPR disposed in the first direction and comprising a third voltage source providing a third voltage that is different from the first and the second voltages;
a diffusion region disposed in a second direction and extending over the second BPR in the second section and the third BPR in the second region; and
a connection between the diffusion region and the second BPR to provide the second voltage of the second voltage source to the second region.