US 12,136,456 B2
Drift compensation for codewords in memory
Marco Sforzin, Cernusco sul Naviglio (IT); Paolo Amato, Treviglio (IT); Luca Barletta, Gallarate (IT); Marco Pietro Ferrari, Milan (IT); and Antonino Favano, Brolo (IT)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Sep. 20, 2022, as Appl. No. 17/948,582.
Claims priority of provisional application 63/402,338, filed on Aug. 30, 2022.
Prior Publication US 2024/0071487 A1, Feb. 29, 2024
Int. Cl. G11C 29/00 (2006.01); G11C 11/4074 (2006.01); G11C 11/4099 (2006.01); G11C 11/56 (2006.01)
CPC G11C 11/5642 (2013.01) [G11C 11/4074 (2013.01); G11C 11/4099 (2013.01)] 24 Claims
OG exemplary drawing
 
1. An apparatus, comprising:
a memory device, comprising:
an array of memory cells; and
circuitry configured to:
sense a codeword stored in the array of memory cells using a reference voltage; and
determine an amount by which to adjust the reference voltage used to sense the codeword based on:
an estimated weight of an original codeword;
a mean of threshold voltage values of each memory cell of the sensed codeword; and
a total quantity of memory cells of the sensed codeword; and
adjust the reference voltage used to sense the codeword by the determined amount.