US 12,136,447 B2
Tetragonal half metallic half-Heusler compounds
Sergey Faleev, Santa Clara, CA (US); Panagiotis Charilaos Filippou, Fremont, CA (US); Yari Ferrante, San Jose, CA (US); Chirag Garg, San Jose, CA (US); Mahesh Samant, San Jose, CA (US); and Jaewoo Jeong, Los Altos, CA (US)
Assigned to International Business Machines Corporation, Armonk, NY (US); and Samsung Electronics Co., Ltd., Gyeonggi-Do (KR)
Filed by International Business Machines Corporation, Armonk, NY (US); and Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed on Mar. 31, 2022, as Appl. No. 17/710,399.
Prior Publication US 2023/0317129 A1, Oct. 5, 2023
Int. Cl. G11C 16/04 (2006.01); G11C 11/16 (2006.01); H10B 61/00 (2023.01); H10N 50/01 (2023.01); H10N 50/10 (2023.01); H10N 50/85 (2023.01)
CPC G11C 11/161 (2013.01) [G11C 11/1655 (2013.01); G11C 11/1657 (2013.01); H10B 61/22 (2023.02); H10N 50/01 (2023.02); H10N 50/10 (2023.02); H10N 50/85 (2023.02)] 25 Claims
OG exemplary drawing
 
1. A magnetoresistive random-access memory cell, comprising:
a templating layer comprising a binary alloy having an alternating layer lattice structure;
a half metallic half-Heusler layer comprising a half metallic half-Heusler material having a tetragonal lattice structure, the half metallic half-Heusler layer being located outward of the templating layer, and having a half-Heusler in-plane lattice constant that is different from an in-plane lattice constant in a cubic form of the half metallic half-Heusler material;
a tunnel barrier outward of the half metallic half-Heusler layer; and
a magnetic layer outward of the tunnel barrier.