US 12,135,897 B2
Memory controller, a storage device, and an operating method of the storage device preliminary class
Hyojin Ahn, Suwon-si (KR); Seoyeong Lee, Suwon-si (KR); Dongwoo Shin, Suwon-si (KR); and Changjun Lee, Suwon-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Apr. 20, 2023, as Appl. No. 18/137,036.
Claims priority of application No. 10-2022-0107180 (KR), filed on Aug. 25, 2022.
Prior Publication US 2024/0069790 A1, Feb. 29, 2024
Int. Cl. G06F 3/06 (2006.01)
CPC G06F 3/0655 (2013.01) [G06F 3/0604 (2013.01); G06F 3/0679 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An operating method of a storage device including a memory controller and a non-volatile memory, the operating method comprising:
performing a first read operation in response to a read request of a host by reading data from the non-volatile memory based on a default read voltage set; and
performing a second read operation when the first read operation fails, by calculating a degradation compensation level, based on at least one weight table, at least one offset table, and a displacement level, calculating a history read voltage set by performing an operation on the default read voltage set and the degradation compensation level, and reading the data based on the history read voltage set,
wherein the at least one weight table includes weights preset according to word line groups and state read voltages, the at least one offset table includes offset levels preset according to the word line groups and the state read voltages, and the displacement level corresponds to a difference between a default read voltage level in the default read voltage set and an optimal read voltage level in an optimal read voltage set.