| CPC G06F 13/1689 (2013.01) [G06F 13/4068 (2013.01); G06F 13/42 (2013.01); G11C 7/22 (2013.01); G11C 8/00 (2013.01); G11C 29/12 (2013.01); H01L 23/5381 (2013.01); H01L 23/5384 (2013.01); H01L 23/5386 (2013.01); H01L 23/5389 (2013.01); H01L 25/18 (2013.01); H03K 19/003 (2013.01); H03K 19/1733 (2013.01); H03K 19/1776 (2013.01); G06F 1/00 (2013.01); H01L 24/17 (2013.01); H01L 25/0655 (2013.01); H01L 25/0657 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/16227 (2013.01); H01L 2225/06513 (2013.01); H01L 2924/1431 (2013.01); H01L 2924/1433 (2013.01); H01L 2924/1434 (2013.01); H03K 19/00 (2013.01)] | 20 Claims |

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1. A memory integrated circuit, comprising:
a primary circuit configured to implement a first memory operation; and
an embedded programmable logic configured to implement a second memory operation, wherein the second memory operation is configured to adjust functionality of the primary circuit.
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