| CPC G05F 1/565 (2013.01) [G05F 1/468 (2013.01); G05F 3/262 (2013.01)] | 18 Claims |

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1. A low dropout regulator, comprising:
a first gain-stage, configured to generate a first signal at a first gain-stage terminal based on a second signal at a second gain-stage terminal;
a second gain-stage, electrically connected to the first gain-stage terminal, configured to receive the first signal at the first gain-stage terminal and generate a third signal at a sensing terminal;
an output setting stage, electrically connected to the first gain-stage terminal and the sensing terminal, configured to output a load current to an output terminal, wherein the third signal at the sensing terminal is changed with the load current; and
a Miller circuit, electrically connected to the first gain-stage, the second gain-stage, and the output setting stage, configured to provide a capacitance related to a dominant pole of the low dropout regulator, wherein the capacitance is changed with the third signal at the sensing terminal;
wherein the first gain-stage comprises:
a first first-stage transistor, electrically connected to the first gain-stage terminal; and
a second first-stage transistor, electrically connected to the first gain-stage terminal and the second gain-stage terminal, wherein the first signal at the first gain-stage terminal is changed with a first gain-stage current flowing through the first first-stage transistor and the second first-stage transistor; or
wherein the output setting stage comprises:
a first power transistor, electrically connected to the first gain-stage terminal and the output terminal, configured to be selectively switched on in response to the first signal at the first gain-stage terminal; and
a second power transistor, electrically connected to the sensing terminal and the output terminal, configured to be selectively switched on in response to the third signal at the sensing terminal, wherein a fourth signal at the output terminal is changed with switching statuses of the first power transistor and the second power transistor.
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