US 12,135,503 B2
Organometallic photoresists for DUV or EUV lithography
Gerhard Ingmar Meijer, Zurich (CH); Valery Weber, Gattikon (CH); and Peter Willem Jan Staar, Zurich (CH)
Assigned to International Business Machines Corporation, Armonk, NY (US)
Filed by International Business Machines Corporation, Armonk, NY (US)
Filed on Apr. 1, 2021, as Appl. No. 17/220,412.
Prior Publication US 2022/0317572 A1, Oct. 6, 2022
Int. Cl. G03F 7/20 (2006.01); G03F 7/004 (2006.01)
CPC G03F 7/2004 (2013.01) [G03F 7/0042 (2013.01)] 15 Claims
OG exemplary drawing
 
1. An organometallic photoresist composition comprising:
a first organometallic molecule having at least Bi as a metal element, and having an oxidation state of 3+, and at least one first organometallic molecule polymerizable group R, wherein the first organometallic molecule is sensitive to DUV and EUV radiation;
a second organometallic molecule having at least Sb as a metal element, and having an oxidation state of 3+, and at least one second organometallic molecule polymerizable group R, wherein the second organometallic molecule is sensitive to DUV and EUV radiation;
a solvent that dissolves the first and second organometallic molecules.