US 12,135,501 B2
Method of manufacturing a semiconductor device
Ming-Hui Weng, New Taipei (TW); Chen-Yu Liu, Kaohsiung (TW); Chih-Cheng Liu, Hsinchu (TW); Yi-Chen Kuo, Taichung (TW); Jia-Lin Wei, Hsinchu (TW); Yen-Yu Chen, Taipei (TW); Jr-Hung Li, Chupei (TW); Yahru Cheng, Taipei (TW); Chi-Ming Yang, Hsinchu (TW); Tze-Liang Lee, Hsinchu (TW); and Ching-Yu Chang, Yilang County (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Aug. 3, 2023, as Appl. No. 18/230,062.
Application 18/230,062 is a continuation of application No. 17/071,004, filed on Oct. 15, 2020, granted, now 11,822,237.
Claims priority of provisional application 63/025,956, filed on May 15, 2020.
Claims priority of provisional application 63/002,264, filed on Mar. 30, 2020.
Prior Publication US 2023/0375920 A1, Nov. 23, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. G03F 7/004 (2006.01); G03F 7/00 (2006.01); H01L 21/033 (2006.01)
CPC G03F 7/004 (2013.01) [G03F 7/0035 (2013.01); H01L 21/0332 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of manufacturing a semiconductor device, comprising:
depositing a resist layer over a substrate surface by atomic layer deposition (ALD) or chemical vapor deposition (CVD),
wherein the resist layer comprises a reaction product of an organometallic compound and at least one of an amine, a borane, a phosphine, and water;
forming a protective layer over the resist layer;
after forming the protective layer, patternwise crosslinking the resist layer to form a latent pattern in the resist layer;
removing the protective layer; and
developing the latent pattern by applying a developer to the patternwise crosslinked resist layer to form a pattern exposing a portion of the substrate surface.
 
10. A method of manufacturing a semiconductor device, comprising:
depositing a reaction product of a vapor phase organometallic compound and a second vapor phase compound over a substrate to form a resist layer over the substrate surface,
wherein the organometallic compound has a formula:
MaRbXc
where M is at least one of Sn, Bi, Sb, In, Te, Ti, Zr, Hf, V, Co, Mo, W, Al, Ga, Si,
Ge, P, As, Y, La, Ce, or Lu,
R is a substituted or unsubstituted alkyl, alkenyl, or carboxylate group,
X is a halide or sulfonate group, and
1≤a≤2, b≥1, c≥1, and b+c≤5, and
the second vapor phase compound is at least one of an amine, a borane, a phosphine, or water;
forming a protective layer over the resist layer;
patternwise crosslinking the resist layer to form a latent pattern in the resist layer;
after patternwise crosslinking the resist layer, removing the protective layer; and
developing the latent pattern by applying a developer to the patternwise crosslinked resist layer to form a pattern exposing a portion of the substrate surface.
 
17. A method of manufacturing a semiconductor device, comprising:
depositing a photoresist layer over a substrate by a vapor phase deposition operation;
wherein the photoresist layer comprises a reaction product of an organometallic compound and a second compound, wherein the second compound is at least one of an amine, a borane, a phosphine, or water;
coating a protective layer composition comprising a polymer and a solvent over the photoresist layer to form a protective layer;
selectively exposing the photoresist layer to actinic radiation through the protective layer to form a latent pattern in the photoresist layer;
removing the protective layer; and
removing portions of the photoresist layer not exposed to the actinic radiation to form a pattern of remaining portions of the photoresist layer that were exposed to the actinic radiation during the selectively exposing the photoresist layer.