| CPC G02F 1/1368 (2013.01) [G02F 1/136209 (2013.01); G02F 1/136222 (2021.01); H01L 27/124 (2013.01); H01L 27/1288 (2013.01)] | 18 Claims |
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1. A driving substrate, comprising:
a substrate;
a thin film transistor structure layer disposed on the substrate, wherein the thin film transistor structure layer comprises a first thin film transistor;
a first conductive layer disposed on the thin film transistor structure layer, wherein the first conductive layer comprises a first electrode, and the first electrode is connected to the first thin film transistor;
a photosensitive diode disposed on the first electrode, wherein the photosensitive diode comprises a first semiconductor layer and an intrinsic semiconductor layer sequentially disposed on the first electrode, and the intrinsic semiconductor layer wraps the first semiconductor layer and the first electrode; and
a second conductive layer disposed on the photosensitive diode, wherein the second conductive layer comprises a second electrode, and the second electrode covers the photosensitive diode,
wherein the second conductive layer further comprises a common electrode, and the common electrode is connected to the second electrode,
wherein the thin film transistor structure layer comprises a buffer layer, an active layer, an insulating layer, a first metal layer, an interlayer dielectric layer, a second metal layer, and a planarization layer which are sequentially disposed on the substrate;
the first metal layer comprises a first gate, and the active layer comprises a first active portion, and the second metal layer comprises a first source, a first drain, and a common wire; and
the first gate, the first active portion, the first source, and the first drain form the first thin film transistor; the first source or the first drain is electrically connected to the first electrode, and the common wire is connected to the second electrode and the common electrode.
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