US 12,135,486 B2
Driving substrate, display panel, and manufacturing method of driving substrate
Jiyue Song, Hubei (CN); and Fei Ai, Hubei (CN)
Assigned to Wuhan China Star Optoelectronics Technology Co., Ltd., Wuhan (CN)
Appl. No. 17/289,764
Filed by Wuhan China Star Optoelectronics Technology Co., Ltd., Hubei (CN)
PCT Filed Mar. 17, 2021, PCT No. PCT/CN2021/081364
§ 371(c)(1), (2) Date Nov. 29, 2023,
PCT Pub. No. WO2022/188198, PCT Pub. Date Sep. 15, 2022.
Claims priority of application No. 202110249764.4 (CN), filed on Mar. 8, 2021.
Prior Publication US 2024/0077776 A1, Mar. 7, 2024
Int. Cl. G02F 1/1368 (2006.01); G02F 1/1362 (2006.01); H01L 27/12 (2006.01)
CPC G02F 1/1368 (2013.01) [G02F 1/136209 (2013.01); G02F 1/136222 (2021.01); H01L 27/124 (2013.01); H01L 27/1288 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A driving substrate, comprising:
a substrate;
a thin film transistor structure layer disposed on the substrate, wherein the thin film transistor structure layer comprises a first thin film transistor;
a first conductive layer disposed on the thin film transistor structure layer, wherein the first conductive layer comprises a first electrode, and the first electrode is connected to the first thin film transistor;
a photosensitive diode disposed on the first electrode, wherein the photosensitive diode comprises a first semiconductor layer and an intrinsic semiconductor layer sequentially disposed on the first electrode, and the intrinsic semiconductor layer wraps the first semiconductor layer and the first electrode; and
a second conductive layer disposed on the photosensitive diode, wherein the second conductive layer comprises a second electrode, and the second electrode covers the photosensitive diode,
wherein the second conductive layer further comprises a common electrode, and the common electrode is connected to the second electrode,
wherein the thin film transistor structure layer comprises a buffer layer, an active layer, an insulating layer, a first metal layer, an interlayer dielectric layer, a second metal layer, and a planarization layer which are sequentially disposed on the substrate;
the first metal layer comprises a first gate, and the active layer comprises a first active portion, and the second metal layer comprises a first source, a first drain, and a common wire; and
the first gate, the first active portion, the first source, and the first drain form the first thin film transistor; the first source or the first drain is electrically connected to the first electrode, and the common wire is connected to the second electrode and the common electrode.