US 12,135,245 B2
Temperature detection
Marijan Herceg, Osijek (HR); and Tomislav Matic, Osijek (HR)
Assigned to NOKIA TECHNOLOGIES OY, Espoo (FI)
Appl. No. 17/434,874
Filed by NOKIA TECHNOLOGIES OY, Espoo (FI)
PCT Filed Mar. 8, 2019, PCT No. PCT/EP2019/055922
§ 371(c)(1), (2) Date Aug. 30, 2021,
PCT Pub. No. WO2020/182282, PCT Pub. Date Sep. 17, 2020.
Prior Publication US 2022/0163401 A1, May 26, 2022
Int. Cl. G01K 7/01 (2006.01)
CPC G01K 7/01 (2013.01) 4 Claims
OG exemplary drawing
 
1. A temperature detecting apparatus, comprising:
a first current reference configured to provide a current to a serially connected first temperature dependent transconductance device via a first intermediate node;
a second current reference configured to provide a current to a serially connected second temperature dependent transconductance device via a second intermediate node;
a detector configured to detect a voltage between the first and second intermediate nodes to detect a temperature difference between the first temperature dependent transconductance device and the second temperature dependent transconductance device, wherein the detector is configured to detect one or more of an existence of the voltage, a polarity of the voltage, and a magnitude of the voltage, and wherein the first current reference is a temperature dependent reverse bias configured diode configured to provide a first temperature dependent current; and
a temperature detector configured to convert the detected voltage between the first and second intermediate nodes to an indication of the temperature difference,
wherein a variable magnitude of a reverse saturation current of the first current reference increases with temperature,
wherein the second current reference is a temperature dependent reverse bias configured diode configured to provide a second temperature dependent current,
wherein the temperature dependent reverse bias configured diode of at least one of the first current reference and the second current reference is substantially voltage independent within an operational voltage range,
wherein the first current reference and the second current reference have the same voltage-current characteristic,
wherein the first temperature dependent transconductance device and the second temperature dependent transconductance device have the same voltage-current characteristic,
wherein the first temperature dependent transconductance device is a forward bias configured diode, and the second temperature dependent transconductance device is a forward bias configured diode, and
wherein the first current reference and the first temperature dependent transconductance device are back to back diodes and wherein the second current reference and the second temperature dependent transconductance device are back to back diodes.