US 12,135,226 B2
Magnetoresistive element with free-layer and method of manufacturing same
Jochen Schmitt, Biedenkopf (DE); Cian Padraic O Dalaigh, Raheen (IE); Md Tarequzzaman, Limerick (IE); Onur Necdet Urs, Limerick (IE); Jan Kubik, Limerick (IE); and Enno Lage, Kiel (DE)
Assigned to Analog Devices International Unlimited Company, Limerick (IE)
Filed by Analog Devices International Unlimited Company, County Limerick (IE)
Filed on May 11, 2021, as Appl. No. 17/317,675.
Claims priority of provisional application 63/030,092, filed on May 26, 2020.
Prior Publication US 2021/0372820 A1, Dec. 2, 2021
Int. Cl. G01D 5/16 (2006.01); H01F 10/32 (2006.01); B62D 15/02 (2006.01)
CPC G01D 5/16 (2013.01) [H01F 10/3272 (2013.01); B62D 15/021 (2013.01)] 22 Claims
OG exemplary drawing
 
1. A giant magnetoresistive element for a magnetic multi-turn sensor, the giant magnetoresistive element comprising:
a reference layer;
a non-magnetic layer adjacent to the reference layer; and
a free-layer of ferromagnetic material, wherein the free-layer comprises a first layer of ferromagnetic material adjacent to the non-magnetic layer, and a multi-layer arrangement at least comprising a plurality of layers of a first material, the first material being ferromagnetic, and a plurality of layers of a second material,
wherein a thickness of the free-layer is greater than 30 nm, and
wherein the plurality of layers of the first material have a first magnetostriction and the plurality of layers of the second material have a second magnetostriction that reduces magnetostriction of the free-layer.